IRF7524D1 preliminary description l co-packaged hexfet power mosfet and schottky diode l p-channel hexfet l low v f schottky rectifier l generation 5 technology l micro8 tm footprint v dss = -20v r ds(on) = 0.27 w schottky vf = 0.39v fetky mosfet & schottky diode tm micro8 tm notes: ? repetitive rating C pulse width limited by max. junction temperature (see fig. 9) ? i sd -1.2a, di/dt 100a/s, v dd v (br)dss , t j 150c ? pulse width 300s C duty cycle 2% ? when mounted on 1 inch square copper board to approximate typical multi-layer pcb thermal resistance 01/29/99 top view 8 1 2 3 4 5 6 7 a a s g d d k k www.irf.com 1 absolute maximum ratings parameter maximum units r q ja junction-to-ambient ? 100 c/w thermal resistance ratings parameter maximum units i d @ t a = 25c -1.7 i d @ t a = 70c -1.4 i dm pulsed drain current -14 p d @t a = 25c 1.25 p d @t a = 70c 0.8 linear derating factor 10 mw/c v gs gate-to-source voltage 12 v dv/dt peak diode recovery dv/dt -5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c continuous drain current, v gs @ -4.5v power dissipation a w the fetky tm family of co-packaged hexfets and schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. generation 5 hexfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, pda, etc. the new micro8 tm package, with half the footprint area of the standard so-8, provides the smallest footprint available in an soic outline. this makes the micro8 tm an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro8 tm will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. pd -91648c
IRF7524D1 2 www.irf.com mosfet electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 CCC CCC v v gs = 0v, i d = -250a CCC 0.17 0.27 v gs = -4.5v, i d = -1.2a ? CCC 0.28 0.40 v gs = -2.7v, i d = -0.60a ? v gs(th) gate threshold voltage -0.70 CCC CCC v v ds = v gs , i d = -250a g fs forward transconductance 1.3 CCC CCC s v ds = -10v, i d = -0.60a CCC CCC -1.0 v ds = -16v, v gs = 0v CCC CCC -25 v ds = -16v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC -100 v gs = -12v gate-to-source reverse leakage CCC CCC 100 v gs = 12v q g total gate charge CCC 5.4 8.2 i d = -1.2a q gs gate-to-source charge CCC 0.96 1.4 nc v ds = -16v q gd gate-to-drain ("miller") charge CCC 2.4 3.6 v gs = -4.5v, see fig. 6 ? t d(on) turn-on delay time CCC 9.1 CCC v dd = -10v t r rise time CCC 35 CCC i d = -1.2a t d(off) turn-off delay time CCC 38 CCC r g = 6.0 w t f fall time CCC 43 CCC r d = 8.3 w , ? c iss input capacitance CCC 240 CCC v gs = 0v c oss output capacitance CCC 130 CCC pf v ds = -15v c rss reverse transfer capacitance CCC 64 CCC ? = 1.0mhz, see fig. 5 r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current i gss w a na ns parameter min. typ. max. units conditions i s continuous source current( body diode) CCC CCC -1.25 i sm pulsed source current (body diode) CCC CCC -9.6 v sd body diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -1.2a, v gs = 0v t rr reverse recovery time (body diode) CCC 52 78 ns t j = 25c, i f = -1.2a q rr reverse recovery charge CCC 63 95 nc di/dt = 100a/s ? a mosfet source-drain ratings and characteristics parameter max. units conditions i f(av) max. average forward current 1.9 50% duty cycle. rectangular wave, t a = 25c 1.4 fig.14 t a = 70c i sm max. peak one cycle non-repetitive 120 5s sine or 3s rect. pulse following any rated surge current 11 10ms sine or 6ms rect. pulse load condition & with v rrm applied a a schottky diode maximum ratings parameter max. units conditions v fm max. forward voltage drop 0.50 i f = 1.0a, t j = 25c 0.62 i f = 2.0a, t j = 25c 0.39 i f = 1.0a, t j = 125c 0.57 i f = 2.0a, t j = 125c . i rm max. reverse leakage current 0.02 v r = 20v t j = 25c 8 t j = 125c c t max. junction capacitance 92 pf v r = 5vdc ( 100khz to 1 mhz) 25c dv/dt max. voltage rate of charge 3600 v/ s rated v r schottky diode electrical specifications v ma ( hexfet is the reg. tm for international rectifier power mosfet's ) see
IRF7524D1 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , g ate-to-source volta g e (v) v = -1 0 v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source o n resistance ds(on) (normalized) a i = -1.2a v = -4.5v d gs 0.01 0.1 1 10 0.1 1 10 20s pulse width t = 150 c j top bottom vgs -7.50v -5.00v -4.00v -3.50v -3.00v -2.50v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v 0.01 0.1 1 10 0.1 1 10 20 s pulse width t = 25 c j top bottom vgs -7.50v -5.00v -4.00v -3.50v -3.00v -2.50v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v power mosfet characteristics
IRF7524D1 4 www.irf.com fig 7. typical source-drain diode forward voltage fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 0 100 200 300 400 500 1 10 100 c, capacitance (pf) a ds -v , drain-to-source volta g e ( v ) v = 0v , f = 1mhz c = c + c , c shorte d c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0246810 g gs a -v , gate-to-source voltage (v) q , total g ate char g e ( nc ) i = -1.2a v = -16v for test circuit see figure 9 d ds 0.01 0.1 1 10 0.4 0.6 0.8 1.0 1.2 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) 0.1 1 10 100 1 10 100 ope ration in this area limite d by r ds(on) t = 25c t = 150c sin g le p u ls e a -i , drain current (a) -v , drain-to-source volta g e ( v ) ds d a j 100s 1ms 10ms power mosfet characteristics
IRF7524D1 www.irf.com 5 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 9. maximum effective transient thermal impedance, junction-to-ambient fig 10. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage power mosfet characteristics 0.0 0.5 1.0 1.5 2.0 0.0 0.2 0.4 0.6 0.8 1.0 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -2.5v vgs = -5.0v r ds (on) , drain-to-source on resistance ( w ) 2 3 4 5 6 7 8 0.100 0.150 0.200 0.250 0.300 r , drain-to-source on resistance -v , gate-to-source volta g e (v) gs ds (on) id = -1.7a r ds (on) , drain-to-source on resistance ( w )
IRF7524D1 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage reverse current - i r (ma) 0.0001 0.001 0.01 0.1 1 10 100 0 4 8 12 16 20 r 100c 75c 50c 25c reverse voltage - v (v) 125c a t = 150c j fig. 12 -typical forward voltage drop characteristics 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 fm f instantaneous forward current - i (a) forward volta g e drop - v ( v ) t = 150c t = 125c t = 25c j j j fig.14 - maximum allowable ambient temp. vs. forward current forward voltage drop - v f (v) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 f(av) a avera g e f orw ard c urrent - i (a ) allow able am bient tem perature - (c) d = 3/4 d = 1/2 d =1/3 d = 1/4 d = 1/5 dc v = 20v r = 100c/w square wave thja r
IRF7524D1 www.irf.com 7 micro8 tm package details part marking inches millimeters min max min max a 0.10 (.004) 0.25 (.010) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.003) m c a s b s a 1 l 8x c 8x q notes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 co ntrolling dimension : inch. 3 dimensions do not include mold flash. a .036 .044 0.91 1.11 a1 .004 .008 0.10 0.20 b .010 .014 0.25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .116 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .026 0.41 0.66 q 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.38 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x
IRF7524D1 8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1 . o u tl in e c o n fo r m s t o e ia -481 & e ia -54 1. 2. controlling dimension : millimeter. micro8 tm tape & reel world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 221 8371 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice . 01/99
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